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T2316405A Datasheet(PDF) 3 Page - Taiwan Memory Technology

Part # T2316405A
Description  4M x 4 DYNAMIC RAM EDO PAGE MODE???
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Manufacturer  TMT [Taiwan Memory Technology]
Direct Link  http://www.tmtech.com.tw
Logo TMT - Taiwan Memory Technology

T2316405A Datasheet(HTML) 3 Page - Taiwan Memory Technology

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TE
CH
tm
Preliminary T2316407A
Taiwan Memory Technology, Inc. reserves the right P. 3
Publication Date: APR 2001
to change products or specifications without notice.
Revision:0.B
T2316405A
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on Any Pin Relative To Vss
VT
-0.5 to 4.6
V
Supply Voltage Relative To Vss
Vcc
-0.5 to 4.6
V
Short circuit Output Current
Iout
50
mA
Power Dissipation
PT
1
W
Operating Temperature
TOPR
0 to 70
°C
Storage Temperature
Tstg
-55 to 125
°C
RECOMMENDED DC OPERATING CONDITIONS
(Ta = 0 to +70
°°C) For T2316405A-10 only
Parameter
Symbol
Min.
Typ
Max.
Unit
Notes
Vss
0
0
0
V
Supply Voltage
Vcc
2.4
2.6
2.8
V
1
Input High Voltage
VIH
2.0
-
Vcc+0.3V
V
1
Input Low Voltage
VIL
-0.3
-
0.8
V
1
(Ta = 0 to +70
°°C) For T2316407A-50/60/70 only
Parameter
Symbol
Min.
Typ
Max.
Unit
Notes
Vss
0
0
0
V
Supply Voltage
Vcc
3.0
3.3
3.6
V
1
Input High Voltage
VIH
2.0
-
Vcc+0.3V
V
1
Input Low Voltage
VIL
-0.3
-
0.8
V
1
Notes : 1. All voltages referenced to Vss


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