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APT20F50S Datasheet(PDF) 1 Page - Microsemi Corporation |
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APT20F50S Datasheet(HTML) 1 Page - Microsemi Corporation |
1 / 4 page N-Channel FREDFET Absolute Maximum Ratings Thermal and Mechanical Characteristics G D S Single die FREDFET Unit A V mJ A Unit W °C/W °C oz g in·lbf N·m Ratings 20 13 60 ±30 405 10 Min Typ Max 290 0.43 0.15 -55 150 300 0.22 6.2 10 1.1 Parameter Continuous Drain Current @ T C = 25°C Continuous Drain Current @ T C = 100°C Pulsed Drain Current 1 Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive Characteristic Total Power Dissipation @ T C = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight Mounting Torque ( TO-247 Package), 6-32 or M3 screw Symbol I D I DM V GS E AS I AR Symbol P D R θJC R θCS T J,TSTG T L W T Torque TYPICAL APPLICATIONS • ZVSphaseshiftedandotherfullbridge •Halfbridge •PFCandotherboostconverter • Buckconverter •Singleandtwoswitchforward •Flyback FEATURES •FastswitchingwithlowEMI •Lowtrrforhighreliability •UltralowCrssforimprovednoiseimmunity •Lowgatecharge •Avalancheenergyrated •RoHScompliant TO-247 D3PAK APT20F50B APT20F50S 500V,20A,0.30 ΩMax,Trr≤ 200nS APT20F50B APT20F50S Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. MicrosemiWebsite-http://www.microsemi.com |
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