SSO-AD-230-TO52-S1 datasheet(1/2 Pages) ROITHNER

Part #	SSO-AD-230-TO52-S1

Description	Avalanche Photodiode

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Manufacturer	ROITHNER [Roithner LaserTechnik GmbH]

Direct Link	http://www.roithner-laser.com

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Special characteristics:

High gain at low bias voltage

Fast rise time

230 µm diameter active area

low capacitance

Package (TO52 S1) :

SSO-AD-230-TO52-S1

Avalanche Photodiode

Parameters:

active area

0,042 mm

2

∅ 230 µm

dark current

1)

(M=100)

max. 1,5 nA

typ. 0,6 nA

Total capacitance

1)

(M=100)

typ. 1,5 pF

Break-down voltage UBR

(at ID=2µA)

(90 ... 240)

typ. 120 - 190 V

Temperature coefficient of UBR

typ. 0,4 %/°C

Spectral responsivity

(at 780 nm)

min. 0,40 A/W

typ. 0,45 A/W

Cut-off frequency

(-3dB)

typ. 2 GHz

Rise time

typ. 180 ps

Optimum gain

50 - 60

Gain M

min 200

"Excess Noise" factor

(M=100)

typ. 2,2

"Excess Noise" index

(M=100)

typ. 0,2

Noise current

(M=100)

typ. 0,5 pA/Hz

½

N.E.P.

(M=100, 880 nm)

typ. 1 * 10

-14 W/Hz½

Operating temperature

Storage temperature

-20 ... +70°C

-60 ... +100°C

1) measurement conditions:

Setup of photo current 10nA at M=1 and irradiation by a

NIR-LED (880 nm, 80 nm bandwith).

Rise of the photo current up to 1 µA, (M=100) by internal

multiplication due to an increasing bias voltage.

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SSO-AD-230-TO52-S1 Datasheet(PDF) 1 Page - Roithner LaserTechnik GmbH

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