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T15M256B Datasheet(PDF) 5 Page - Taiwan Memory Technology

Part # T15M256B
Description  32K X 8 LOW POWER CMOS STATIC RAM
Download  13 Pages
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Manufacturer  TMT [Taiwan Memory Technology]
Direct Link  http://www.tmtech.com.tw
Logo TMT - Taiwan Memory Technology

T15M256B Datasheet(HTML) 5 Page - Taiwan Memory Technology

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TE
CH
tm
T15M256B
TM Technology Inc. reserves the right
P. 5
Publication Date: MAY. 2002
to change products or specifications without notice.
Revision:A
AC CHARACTERISTICS
(Vcc= 5V / ± 10%, Vss = 0V, Ta =0 ~ +70 °C/ -40 to 85°C)
(1) READ CYCLE
-50ns
-70ns
-85ns
-100ns
PARAMETER
SYM.
MIN
MAX
MIN. MAX.
MIN. MAX. MIN. MAX.
UNIT
Read Cycle Time
tRC
50
-
70
-
85
-
100
-
ns
Address Access Time
tAA
-
50
-
70
-
85
-
100
ns
Chip Select Access Time
tACS
-
50
-
70
-
85
-
100
ns
Output Enable to Output Valid
tAOE
-
25
-
35
-
40
-
50
ns
Chip Selection to Output in Low Z
tCLZ*
7
-
10
-
10
-
10
-
ns
Output Enable to Output in Low Z
tOLZ*
5
-
5
-
5
-
5
-
ns
Chip Deselection to Output in High Z tCHZ*
-
20
-
25
-
30
-
30
ns
Output Disable to Output in High Z
tOHZ*
-
20
-
25
-
30
-
30
ns
Output Hold from Address Change
tOH
10
-
10
-
10
-
10
-
ns
* These parameters is measured with 5pF test load.
(2)WRITE CYCLE
-50ns
-70ns
-85ns
-100ns
PARAMETER
SYM.
MIN
MAX
MIN. MAX. MIN. MAX. MIN. MAX.
UNIT
Write Cycle Time
tWC
50
-
70
-
85
-
100
-
ns
Chip Selection to End of Write
tCW
40
-
60
-
70
-
80
-
ns
Address Valid to End of Write
tAW
40
-
60
-
70
-
80
-
ns
Address Setup Time
tAS
0
-
0
-
0
-
0
-
ns
Write Pulse Width
tWP
30
-
50
-
60
-
70
-
ns
Write Recovery Time
tWR
0
-
0
-
0
-
0
-
ns
Data Valid to End of Write
tDW
25
-
30
-
35
-
40
-
ns
Data Hold from End of Write
tDH
0
-
0
-
0
-
0
-
ns
Write to Output in High Z
tWHZ*
-
20
-
25
-
30
-
30
ns
Output Active from End of Write
tOW
5
-
5
-
5
-
5
-
ns
* These parameters is measured with 30pF test load.


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