CY62148DV30
Document #: 38-05341 Rev. *D
Page 3 of 10
Maximum Ratings
(Exceeding maximum ratings may impair the useful life of the
device. For user guidelines, not tested.)
Storage Temperature ..................................–65°C to +150°C
Ambient Temperature with
Power Applied...............................................55°C to +125°C
Supply Voltage to Ground
Potential ......................................... –0.3V to VCC(max) + 0.3V
DC Voltage Applied to Outputs
in High-Z State[5, 6]......................... –0.3V to VCC(max) + 0.3V
DC Input Voltage[5, 6] ..................... –0.3V to VCC(max) + 0.3V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... > 200 mA
Operating Range
Product
Range
Ambient
Temperature
VCC[7]
CY62148DV30L
Industrial
–40°C to +85°C 2.2V to
3.6V
CY62148DV30LL
CY62148DV30LL Automotive-A –40°C to +85°C
Electrical Characteristics Over the Operating Range
Parameter
Description
Test Conditions
55 ns
70 ns
Unit
Min Typ[4] Max
Min Typ[4] Max
VOH
Output HIGH
Voltage
IOH = –0.1 mA VCC = 2.20V
2.0
2.0
V
IOH = –1.0 mA VCC = 2.70V
2.4
2.4
V
VOL
Output LOW
Voltage
IOL = 0.1 mA
VCC = 2.20V
0.4
0.4
V
IOL = 2.1 mA
VCC = 2.70V
0.4
0.4
V
VIH
Input HIGH
Voltage
VCC = 2.2V to 2.7V
1.8
VCC+
0.3V
1.8
VCC+
0.3V
V
VCC= 2.7V to 3.6V
2.2
VCC+
0.3V
2.2
VCC+
0.3V
V
VIL
Input LOW
Voltage
VCC = 2.2V to 2.7V
–0.3
0.6
–0.3
0.6
V
VCC= 2.7V to 3.6V
–0.3
0.8
–0.3
0.8
V
IIX
Input Leakage
Current
GND < VI < VCC
–1
+1
–1
+1
µA
IOZ
Output Leakage
Current
GND < VO < VCC, Output Disabled
–1
+1
–1
+1
µA
ICC
VCC Operating
Supply Current
f = fmax = 1/tRC VCC = VCC(max)
IOUT = 0 mA
CMOS levels
Ind’l L
8
15
mA
Ind’l LL
8
10
8
10
mA
Auto-A LL
8
10
mA
f = 1 MHz
Ind’l L
1.5
3
mA
Ind’l LL
1.5
3
1.5
3
mA
Auto-A LL
1.5
3
mA
ISB1
Automatic CE
Power-down
Current —
CMOS Inputs
CE > VCC−0.2V,
VIN>VCC–0.2V, VIN<0.2V)
f = fmax (Address and Data Only),
f = 0 (OE, and WE), VCC=3.60V
Ind’l L
2
12
µA
Ind’l LL
2
8
2
8
Auto-A LL
2
8
ISB2
Automatic CE
Power-down
Current —
CMOS Inputs
CE > VCC – 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V,
f = 0, VCC = 3.60V
Ind’l L
2
12
µA
Ind’l LL
2
8
2
8
Auto-A LL
2
8
Notes:
5. VIL(min) = –2.0V for pulse durations less than 20 ns.
6. VIH(max) = VCC+0.75V for pulse durations less than 20 ns.
7. Full device AC operation assumes a 100
µs ramp time from 0 to VCC(min) and 200 µs wait time after VCC stabilization.
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