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CY62148DV30
Document #: 38-05341 Rev. *D
Page 4 of 10
Capacitance (for all packages)[8]
Parameter
Description
Test Conditions
Max
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz, VCC = VCC(typ)
10
pF
COUT
Output Capacitance
10
pF
Thermal Resistance
Parameter
Description
Test Conditions
VFBGA
TSOP II
SOIC
Unit
ΘJA
Thermal Resistance
(Junction to Ambient)
Still Air, soldered on a 3 x 4.5
inch, four-layer printed circuit
board
72
75.13
55
°C/W
ΘJC
Thermal Resistance
(Junction to Case)
8.86
8.95
22
°C/W
AC Test Loads and Waveforms
Parameters
2.5V (2.2V – 2.7V)
3.0V (2.7V – 3.6V)
Unit
R1
16667
1103
Ω
R2
15385
1554
Ω
RTH
8000
645
Ω
VTH
1.20
1.75
V
Data Retention Characteristics (Over the Operating Range)
Parameter
Description
Conditions
Min Typ[4] Max Unit
VDR
VCC for Data Retention
1.5
V
ICCDR
Data Retention Current
VCC = 1.5V, CE > VCC − 0.2V,
VIN > VCC − 0.2V or VIN < 0.2V
Ind’l
L
9
µA
Ind’l/Auto-A LL
6
µA
tCDR[8]
Chip Deselect to Data Retention Time
0
ns
tR[9]
Operation Recovery Time
tRC
ns
Data Retention Waveform
VCC
VCC
OUTPUT
R2
50 pF
INCLUDING
JIG AND
SCOPE
GND
90%
10%
90%
10%
OUTPUT
VTH
Equivalent to:
THÉVENIN EQUIVALENT
ALL INPUT PULSES
RTH
R1
Fall time: 1 V/ns
Rise Time: 1 V/ns
1.5V
1.5V
tCDR
VDR > 1.5 V
DATA RETENTION MODE
tR
CE
VCC
Notes:
8. Tested initially and after any design or process changes that may affect these parameters.
9. Full Device AC operation requires linear VCC ramp from VDR to VCC(min) > 100 µs or stable at VCC(min) > 100 µs.
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