CY62137FV30 MoBL®
Document Number: 001-07141 Rev. *F
Page 3 of 12
Maximum Ratings
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with
Power Applied .......................................... –55°C to + 125°C
Supply Voltage to Ground
Potential ...........................................................-0.3V to 3.9V
DC Voltage Applied to Outputs
in High Z state [4, 5] ............................................-0.3V to 3.9V
DC Input Voltage [4, 5] .......................................–0.3V to 3.9V
Output Current into Outputs (LOW) ............................ 20 mA
Static Discharge Voltage ......................................... > 2001V
(MIL–STD–883, Method 3015)
Latch up Current .................................................... > 200 mA
Operating Range
Device
Range
Ambient
Temperature
VCC
[6]
CY62137FV30LL Ind’l/Auto-A
–40°C to +85°C 2.2V to 3.6V
Auto-E
–40°C to +125°C
Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
45 ns (Ind’l/Auto-A)
55 ns (Auto-E)
Unit
Min Typ[1]
Max
Min Typ[1]
Max
VOH
Output HIGH Voltage
2.2 < VCC < 2.7
IOH = –0.1 mA
2.0
2.0
V
2.7 < VCC < 3.6
IOH = –1.0 mA
2.4
2.4
V
VOL
Output LOW Voltage
2.2 < VCC < 2.7
IOL = 0.1 mA
0.4
0.4
V
2.7 < VCC < 3.6
IOL = 2.1mA
0.4
0.4
V
VIH
Input HIGH Voltage
2.2 < VCC < 2.7
1.8
VCC + 0.3 1.8
VCC + 0.3 V
2.7 < VCC < 3.6
2.2
VCC + 0.3 2.2
VCC + 0.3 V
VIL
Input LOW Voltage
2.2 < VCC < 2.7
–0.3
0.6
–0.3
0.6
V
2.7 < VCC < 3.6
–0.3
0.8
–0.3
0.8
V
IIX
Input Leakage Current
GND < VI < VCC
–1
+1
–4
+4
μA
IOZ
Output Leakage
Current
GND < VO < VCC, Output disabled
–1
+1
–4
+4
μA
ICC
VCC Operating Supply
Current
f = fmax = 1/tRC
VCC = VCC(max)
IOUT = 0 mA
CMOS levels
13
18
15
25
mA
f = 1 MHz
1.6
2.5
2
3
ISB1
Automatic CE Power
Down Current – CMOS
Inputs
CE > VCC – 0.2V,
VIN > VCC – 0.2V, VIN < 0.2V
f = fmax (address and data only),
f = 0 (OE, WE, BHE, and BLE), VCC = 3.60V
15
1
20
μA
ISB2
[7]
Automatic CE Power
Down Current – CMOS
Inputs
CE > VCC – 0.2V,
VIN > VCC – 0.2V or VIN < 0.2V,
f = 0, VCC = 3.60V
15
1
20
μA
Capacitance
Tested initially and after any design or process changes that may affect these parameters.
Parameter
Description
Test Conditions
Max
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = VCC(typ)
10
pF
COUT
Output Capacitance
10
pF
Notes
4. VIL(min) = –2.0V for pulse durations less than 20 ns.
5. VIH(max)=VCC+0.75V for pulse durations less than 20 ns.
6. Full device AC operation assumes a minimum of 100
μs ramp time from 0 to V
CC(min) and 200 μs wait time after VCC stabilization.
7. Only chip enable (CE) and byte enables (BHE and BLE) are tied to CMOS levels to meet the ISB2 / ICCDR specification. Other inputs can be left floating.
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