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CY7C109BN
CY7C1009BN
Document #: 001-06430 Rev. **
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Data Retention Characteristics Over the Operating Range (Low Power version only)
Parameter
Description
Conditions
Min.
Max
Unit
VDR
VCC for Data Retention
No input may exceed VCC + 0.5V
VCC = VDR = 2.0V,
CE1 > VCC – 0.3V or CE2 < 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
2.0
V
ICCDR
Data Retention Current
150
µA
tCDR
Chip Deselect to Data Retention Time
0
ns
tR
Operation Recovery Time
200
µs
Data Retention Waveform
Switching Waveforms
Read Cycle No. 1[10, 11]
Read Cycle No. 2 (OE Controlled)[11, 12]
Notes:
10. Device is continuously selected. OE, CE1 = VIL, CE2 = VIH.
11. WE is HIGH for read cycle.
12. Address valid prior to or coincident with CE1 transition LOW and CE2 transition HIGH.
4.5V
4.5V
CE
VCC
tCDR
VDR > 2V
DATA RETENTION MODE
tR
PREVIOUS DATA VALID
DATA VALID
tRC
tAA
tOHA
ADDRESS
DATA OUT
50%
50%
DATA VALID
tRC
tACE
tDOE
tLZOE
tLZCE
tPU
HIGH IMPEDANCE
tHZOE
tHZCE
tPD
HIGH
OE
CE1
ICC
ISB
IMPEDANCE
ADDRESS
CE2
DATA OUT
VCC
SUPPLY
CURRENT