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TSV632IST Datasheet(PDF) 8 Page - STMicroelectronics |
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TSV632IST Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 26 page  Electrical characteristics TSV63x 8/26 Doc ID 15688 Rev 2 Table 6. Electrical characteristics at VCC+ = +5 V with VCC- = 0 V, Vicm = VCC/2, Tamb = 25° C, and RL connected to VCC/2 (unless otherwise specified) Symbol Parameter Conditions Min. Typ. Max. Unit DC performance Vio Offset voltages TSV63x TSV63xA TSV633AIST - MiniSO10 3 0.8 1 mV Tmin < Top < Tmax - TSV63x Tmin < Top < Tmax - TSV63xA Tmin < Top < Tmax - TSV633AIST 4.5 2 2.2 mV DVio Input offset voltage drift 2 μV/°C Iio Input offset current (Vout =VCC/2) 110(1) pA Tmin < Top < Tmax 1 100 pA Iib Input bias current (Vout =VCC/2) 110(1) pA Tmin < Top < Tmax 1 100 pA CMR Common mode rejection ratio 20 log ( ΔVic/ΔVio) 0 V to 5 V, Vout = 2.5 V 60 80 dB Tmin < Top < Tmax 55 dB SVR Supply voltage rejection ratio 20 log ( ΔVCC/ΔVio) VCC = 1.8 to 5 V 75 102 dB Tmin < Top < Tmax 73 Avd Large signal voltage gain RL= 10 kΩ, Vout = 0.5 V to 4.5 V 89 98 dB Tmin < Top < Tmax 84 dB EMIRR EMI Rejection Ratio EMIRR = -20 log (VRFpeak/ΔVio) VRF = 100 mVrms, f = 400 MHz 61 dB VRF = 100 mVrms, f = 900 MHz 85 VRF = 100 mVrms, f =1800 MHz 92 VRF = 100 mVrms, f =2400 MHz 83 VOH High level output voltage RL =10kΩ Tmin < Top < Tmax 35 50 7 mV VOL Low level output voltage RL =10kΩ Tmin < Top < Tmax 635 50 mV Iout Isink Vo = 5 V 40 69 mA Tmin < Top < Tmax 35 Isource Vo = 0 V 40 74 mA Tmin < Top < Tmax 35 ICC Supply current (per operator) No load, Vout=VCC/2 50 60 69 µA Tmin < Top < Tmax 72 µA AC performance GBP Gain bandwidth product RL=2kΩ, CL = 100 pF, f = 100 kHz 730 880 kHz Fu Unity gain frequency RL =2 kΩ, CL = 100 pF, 830 kHz |
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