Electronic Components Datasheet Search |
|
T810H-6G-TR Datasheet(PDF) 3 Page - STMicroelectronics |
|
T810H-6G-TR Datasheet(HTML) 3 Page - STMicroelectronics |
3 / 10 page T810H Characteristics Doc ID 15714 Rev 1 3/10 Table 4. Static characteristics Symbol Test conditions Value Unit VT (1) ITM = 11.3 A, tp = 380 µs Tj = 25 °C MAX. 1.5 V Vt0 (1) Threshold voltage Tj = 150 °C MAX. 0.80 V Rd (1) Dynamic resistance Tj = 150 °C MAX. 55.0 m Ω IDRM IRRM VDRM = VRRM Tj = 25 °C MAX. 5 µA Tj = 150 °C MAX. 3.1 mA VD/VR = 400 V (at peak mains voltage) Tj = 150 °C MAX. 2.5 VD/VR = 200 V (at peak mains voltage) Tj = 150 °C MAX. 2.0 1. for both polarities of A2 referenced to A1. Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) D2PAK / TO-220AB 1.60 °C/W Rth(j-a) Junction to ambient S = 1 cm2 D2PAK 45 TO-220AB 60 Figure 1. Maximum power dissipation versus on-state rms current (full cycle) Figure 2. On-state rms current versus case temperature (full cycle) 0 1 2 3 4 5 6 7 8 9 10 012345678 P(W) IT(RMS)(A) 0 1 2 3 4 5 6 7 8 9 10 0 25 50 75 100 125 150 I T(RMS)(A) TC(°C) |
Similar Part No. - T810H-6G-TR |
|
Similar Description - T810H-6G-TR |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |