ACST12 datasheet(4/12 Pages) STMICROELECTRONICS

Part #	ACST12

Description	Transient protected AC power switch

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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Characteristics

ACST12

4/12

Figure 6.

On-state characteristics

(maximum values)

Figure 7.

Non repetitive surge peak on-state

current vs. number of cycles

(Tj initial = 25 °C)

1

10

100

1000

01

23

4

5

ITM (A)

T

j=25 °C

T

j=125 °C

T

j max :

V

to = 0.90 V

R

d = 30 mΩ

VTM (V)

0

10

20

30

40

50

60

70

80

90

100

110

120

130

1

10

100

1000

I(A)

TSM

Non repetitive

T

j initial=25 °C

One cycle

t=20ms

Repetitive

T

C=104 °C

Number of cycles

Figure 8.

Non repetitive surge peak on-state

current for a sinusoidal pulse and

corresponding value of I²t

Figure 9.

Relative variation of gate triggering

current (IGT) and voltage (VGT) vs.

junction temperature (typical value)

I

(A), I t (A s)

TSM

22

1

10

100

1000

10000

0.01

0.10

1.00

10.00

Tj initial=25 °C

dI/dt limitation: 100 A/µs

ITSM

I²t

tP(ms)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

-50

-25

0

25

50

75

100

125

I

GT Q1-Q2

V

GT Q1-Q2-Q3

I

GT Q3

Tj(°C)

I , V [T ] / I , V [T = 25 °C]

GT

j

GT

j

Figure 10.

Relative variation of holding

current (IH) and latching current (IL)

vs. junction temperature

Figure 11.

Relative variation of critical rate of

decrease of main current (di/dt)c

vs. (dV/dt)c

I ,I [T ]/I , I [T = 25 °C]

H

L

j

H

L

j

0.0

0.5

1.0

1.5

2.0

2.5

-50

-25

0

25

50

75

100

125

I

H

I

L

Tj(°C)

Typical values

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.1

1

10

100

ACST12-7Cxx

ACST12

-7Sxx

(di/dt)c[(dV/dt)c] / Specified(di/dt)c

(dV/dt)c (V/µs)

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