2SC5003 datasheet(2/4 Pages) JMNIC

Part #	2SC5003

Description	Silicon NPN Power Transistors

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Manufacturer	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

Direct Link	http://www.jmnic.com

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Product Specification

2

Silicon NPN Power Transistors

2SC5003

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)EBO

Base-emitter breakdown voltage

IEB=300mA; IB=0

6

V

VCEsat

Collector-emitter saturation voltage

IC=5A;IB=1.2A

5

V

VBEsat

Base-emitter saturation voltage

IC=5A;IB=1.2A

1.5

V

ICBO1

Collector cut-off current

VCB=1200V; IE=0

100

μ

A

ICBO2

Collector cut-off current

VCB=1500V; IE=0

1

mA

ICEO

Collector cut-off current

VCE=800V; IE=0

1

mA

IEBO

Emitter cut-off current

VEB=6V; IC=0

100

μ

A

hFE-1

DC current gain

IC=1A ; VCE=5V

8

hFE-2

DC current gain

IC=5A ; VCE=5V

4

9

VFEC

Forward voltage

IEC=7A

2.0

V

fT

Transition frequency

IE=-0.5A ; VCE=12V

4

MHz

COB

Output capacitance

VCB=10V;f=1MHz

100

pF

Switching times

tstg

Storage time

4.0

μ

s

tf

Fall time

IC=4A;IB1=0.8A;

IB2=-1.6A;RL=50Ω

VCC=200V

0.2

μ

s

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2SC5003 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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