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RG2006LN Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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RG2006LN Datasheet(HTML) 1 Page - Sanyo Semicon Device |
1 / 3 page RG2006LN No. A1434-1/3 Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer 's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer 's products or equipment. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Features • High breakdown voltage (VRRM=600V). • High reliability. • One-point fixing type plastic mold package facilitating easy mounting and heat dissipation. • Fast reverse recovery time. • Low noise at the time of reverse recovery. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Repetitive Peak Reverse Voltage VRRM 600 V Nonrepetitive Peak Reverse Surge Voltage VRSM 600 V Average Output Current IO 20 A Peak Output Current IOP PW≤100μs, duty cycle≤50% 40 A Surge Forward Current IFSM Sine wave, 10ms 180 A Junction Temperature Tj 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings Unit min typ max Reverse Voltage VR IR=1mA 600 V Forward Voltage VF1IF=10A 1.45 1.6 V VF2IF=20A 1.8 2.1 V Reverse Current IR VR=600V 100 μA Reverse Recovery Time trr1IF=10A, di / dt=100A/μs50 ns trr2IF=0.5A, IR=1A 16 ns Thermal Resistance Rth(j-c) Junction-Case : Smoothed DC 3.22 °C / W Ordering number : ENA1434 40809SA MS IM TC-00001901 SANYO Semiconductors DATA SHEET RG2006LN www.semiconductor-sanyo.com/network Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode |
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