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TPS62112 Datasheet(PDF) 3 Page - Texas Instruments |
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TPS62112 Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 28 page  ELECTRICAL CHARACTERISTICS TPS62110, TPS62111 TPS62112, TPS62113 www.ti.com .................................................................................................................................................... SLVS585A – JULY 2005 – REVISED FEBRUARY 2009 VI = 12 V, VO = 3.3 V, IO = 600 mA, EN = VI, TA = –40°C to 85°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY CURRENT VI Input voltage range 3.1 17 V IO = 0 mA, SYNC = GND, VI = 7.2 V, 20 TA = 25°C (1) I(Q) Operating quiescent current µA IO = 0 mA, SYNC = GND, VI = 17 V (1) 23 26 Quiescent current with enhanced LBI IQ(LBI) EN = VI , LBI = GND 10 µA comparator version (TPS62113 only). EN = GND 1.5 5 I(SD) Shutdown current µA EN = GND, TA = 25°C, VI = 7.2 V 1.5 3 ENABLE VIH EN high-level input voltage 1.3 V VIL EN low-level input voltage 0.3 V EN trip-point hysteresis 170 mV Ilkg EN input leakage current EN = GND or VI, VI = 12 V 0.01 0.2 µA I(EN) EN input current 0.6 V ≤ V(EN) ≤ 4 V 10 20 µA V(UVLO) Undervoltage lockout threshold Input voltage falling 2.8 3 3.1 V Undervoltage lockout hysteresis 250 300 mV POWER SWITCH VI ≥ 5.4 V; IO = 350 mA 165 250 rDS(ON) P-channel MOSFET on-resistance VI = 3.5 V; IO = 200 mA 340 m Ω VI = 3 V; IO = 100 mA 490 P-channel MOSFET leakage VDS = 17 V 0.1 1 µA current P-channel MOSFET current limit VI = 7.2 V, VO = 3.3 V 2100 2400 2600 mA VI ≥ 5.4 V; IO = 350 mA 145 200 rDS(ON) N-channel MOSFET on-resistance VI = 3.5 V; IO = 200 mA 170 m Ω VI = 3 V; IO = 100 mA 200 N-channel MOSFET leakage VDS = 17 V 0.1 2 µA current POWER-GOOD OUTPUT, LBI, LBO V(PG) Power-good trip voltage VO – 1.6% V VO ramping positive 50 Power-good delay time µs VO ramping negative 200 VOL PG, LBO output-low voltage V(FB) = 0.8 × VO nominal, IOL = 1 mA 0.3 V IOL PG, LBO sink current 1 mA PG, LBO output leakage current V(FB) = VO nominal, V(LBI) = VI 0.01 0.25 µA Minimum supply voltage for valid power 3 V good, LBI, LBO signal VLBI Low-battery input trip voltage Input voltage falling 1.256 V ILBI LBI input leakage current 10 100 nA Low-battery input trip-point 1.5% accuracy VLBI,HYS Low-battery input hysteresis 25 mV (1) Device is not switching. Copyright © 2005–2009, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): TPS62110 TPS62111 TPS62112 TPS62113 |
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