BD440 datasheet(2/4 Pages) MOTOROLA

Part #	BD440

Description	Plastic Medium Power Silicon PNP Transistor

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Manufacturer	MOTOROLA [Motorola, Inc]

Direct Link	http://www.freescale.com

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BD438 BD440 BD442

2

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Collector–Emitter Breakdown Voltage

(IC = 100 mA, IB = 0)

BD438

BD440

BD442

V(BR)CEO

45

60

80

—

Vdc

Collector–Base Breakdown Voltage

(IC = 100 µA, IB = 0)

BD438

BD440

BD442

V(BR)CBO

45

60

80

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 100 µA, IC = 0)

V(BR)EBO

5.0

—

Vdc

Collector Cutoff Current

(VCB = 45 V, IE = 0)

BD438

(VCB = 60 V, IE = 0)

BD440

(VCB = 80 V, IE = 0)

BD442

ICBO

—

0.1

mAdc

Emitter Cutoff Current

(VEB = 5.0 V)

IEBO

—

1.0

mAdc

DC Current Gain

(IC = 10 mA, VCE = 5.0 V)

BD438

BD440

BD442

hFE

30

20

15

—

DC Current Gain

(IC = 500 mA, VCE = 1.0 V)

BD438

BD440

BD442

hFE

85

40

—

375

475

DC Current Gain

(IC = 2.0 A, VCE = 1.0 V)

BD438

BD440

BD442

hFE

40

25

15

—

Collector Saturation Voltage

(IC = 3.0 A, IB = 0.3 A)

BD438

BD440

BD442

VCE(sat)

—

0.7

0.8

Vdc

Base–Emitter On Voltage

BD438

(IC = 2.0 A, VCE = 1.0 V)

BD440/442

VBE(ON)

—

1.1

1.5

Vdc

Current–Gain — Bandwidth Product

(VCE = 1.0 V, IC = 250 mA, f = 1.0 MHz)

fT

3.0

—

MHz

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