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 MOTOROLA
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BD438 BD440 BD442 3 Motorola Bipolar Power Transistor Device Data Figure 1. Collector Saturation Region IB, BASE CURRENT (mA) 2.0 0 0.05 1.6 1.2 0.8 0.4 1.0 2.0 10 70 500 IC = 10 mA 100 mA 1.0 A 0.1 100 20 5.0 TJ = 25°C 3.0 30 0.07 300 200 50 7.0 0.2 0.3 0.5 0.7 3.0 A Figure 2. Current Gain 200 0 10 80 1 2 5 3 100 IC, COLLECTOR CURRENT (AMP) 100 60 40 20 2.0 0.005 IC, COLLECTOR CURRENT (AMP) 1.6 1.2 0.8 0.4 0 TJ = 25°C VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 10 Figure 3. “On” Voltage 0.02 0.03 0.05 0.1 0.2 VBE @ VCE = 2.0 V 0.01 0.3 0.5 1.0 2.0 3.0 4.0 Figure 4. Active Region Safe Operating Area 10 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 4.0 1.0 0.1 2.0 10 20 100 0.5 TJ = 150°C dc 5 ms 1.0 5.0 50 SECONDARY BREAKDOWN THERMAL LIMIT TC = 25°C BONDING WIRE LIMIT CURVES APPLY BELOW RATED VCEO BD438 BD440 BD442 |
