DMN3024LSS

Document Revision: 3

2 of 8

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July 2009

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DMN3024LSS

Characteristic

Symbol

Value

Unit

Drain-Source voltage

30

V

Gate-Source voltage

±20

V

Continuous Drain current

(Note 3)

8.5

A

6.8

(Note 2)

6.4

Pulsed Drain current

(Note 4)

36

A

Continuous Source current (Body diode)

(Note 3)

4.5

A

Pulsed Source current (Body diode)

(Note 4)

36

A

Characteristic

Symbol

Value

Unit

Power dissipation

Linear derating factor

(Note 2)

1.6

12.5

W

mW/

°C

(Note 3)

2.8

22.2

Thermal Resistance, Junction to Ambient

(Note 2)

80

°C/W

(Note 3)

45

Thermal Resistance, Junction to Lead

(Note 5)

35

°C/W

Operating and storage temperature range

-55 to 150

°C

Notes:

2. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is

measured when operating in a steady-state condition.

3. Same as note (2), except the device is measured at t

≤ 10 sec.

4. Same as note (2), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.

5. Thermal resistance from junction to solder-point (at the end of the drain lead): the device is operating in a steady-state condition.