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TRF1020 Datasheet(PDF) 1 Page - Texas Instruments |
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TRF1020 Datasheet(HTML) 1 Page - Texas Instruments |
1 / 26 page TRF1020 GSM RECEIVER SLWS028B – MAY 1998 – REVISED SEPTEMBER 1998 1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 D Operates from 2.75 V to 3.5 V Supply D Low Current Consumption D Low Profile Package: 48-pin Plastic Quad Flat Package (PQFP) D Global System for Mobile Communications (GSM), Class 3, 4, or 5 Mobile Station (MS) Portable Cellular Telephone Applications D Conversion from Radio Frequency (RF) to I and Q Baseband on a Single Chip D Independent Powerdown of Low Noise Amplifiers (LNA), Mixers, Intermediate Frequency (IF) Amplifiers, and Voltage-Controlled Oscillator (VCO) D Digital Gain Control for LNA and IF Amplifiers D Two IF Amplifiers for Dual Conversion if Required D Cascaded Operation of IF Amplifiers for Single-Conversion Configurations D DC Compensation of I and Q Outputs description The TRF1020 is a single-chip radio frequency (RF) downconverter suitable for 900-MHz GSM applications. It combines in one small package an LNA, an RF mixer, an IF mixer, two IF amplifiers, an I and Q mixer, and one buffered VCO. The TRF1020 requires few external components. The LNA has a nominal gain of 12.4 dB and noise figure of 2.1 dB. The first RF mixer has a conversion gain of 13.4 dB and a single-sideband (SSB) noise figure of 8.3 dB. The IF amplifiers have combined variable gain from 0 to 84 dB in approximately 3-dB steps. The IF amplifier frequency range is 40 to 180 MHz for the first IF amplifier and 10 to 180 MHz for the second IF amplifier. The local oscillator of the I and Q mixer operates at four times the last frequency of the IF mixer. Power consumption is kept to a minimum and can be further reduced by dynamically placing selected functions in standby power-down mode when not required. Power-down control is provided through the three-line digital serial interface. These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the gates. Copyright © 1998, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. |
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