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TRF1020 Datasheet(PDF) 1 Page - Texas Instruments

Part # TRF1020
Description  GSM RECEIVER
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TRF1020 Datasheet(HTML) 1 Page - Texas Instruments

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TRF1020
GSM RECEIVER
SLWS028B – MAY 1998 – REVISED SEPTEMBER 1998
1
POST OFFICE BOX 655303
DALLAS, TEXAS 75265
D Operates from 2.75 V to 3.5 V Supply
D Low Current Consumption
D Low Profile Package: 48-pin Plastic Quad
Flat Package (PQFP)
D Global System for Mobile Communications
(GSM), Class 3, 4, or 5 Mobile Station (MS)
Portable Cellular Telephone Applications
D Conversion from Radio Frequency (RF) to
I and Q Baseband on a Single Chip
D Independent Powerdown of Low Noise
Amplifiers (LNA), Mixers, Intermediate
Frequency (IF) Amplifiers, and
Voltage-Controlled Oscillator (VCO)
D Digital Gain Control for LNA and IF
Amplifiers
D Two IF Amplifiers for Dual Conversion if
Required
D Cascaded Operation of IF Amplifiers for
Single-Conversion Configurations
D DC Compensation of I and Q Outputs
description
The TRF1020 is a single-chip radio frequency (RF) downconverter suitable for 900-MHz GSM applications. It
combines in one small package an LNA, an RF mixer, an IF mixer, two IF amplifiers, an I and Q mixer, and one
buffered VCO. The TRF1020 requires few external components.
The LNA has a nominal gain of 12.4 dB and noise figure of 2.1 dB. The first RF mixer has a conversion gain
of 13.4 dB and a single-sideband (SSB) noise figure of 8.3 dB. The IF amplifiers have combined variable gain
from 0 to 84 dB in approximately 3-dB steps. The IF amplifier frequency range is 40 to 180 MHz for the first IF
amplifier and 10 to 180 MHz for the second IF amplifier. The local oscillator of the I and Q mixer operates at four
times the last frequency of the IF mixer.
Power consumption is kept to a minimum and can be further reduced by dynamically placing selected functions
in standby power-down mode when not required. Power-down control is provided through the three-line digital
serial interface.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the gates.
Copyright
© 1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.


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