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TPS61000DGS Datasheet(PDF) 8 Page - Texas Instruments |
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TPS61000DGS Datasheet(HTML) 8 Page - Texas Instruments |
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8 / 22 page  TPS61000, TPS61001, TPS61002, TPS61003, TPS61004, TPS61005, TPS61006 SINGLE-CELL BOOST CONVERTER WITH START-UP INTO FULL LOAD SLVS279A – MARCH 2000 – REVISED MAY 2000 8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over recommended operating free-air temperature range, VBAT = 1.2 V, EN = VBAT (unless otherwise noted) (continued) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT IQ Quiescent current drawn from power source IO = 0 mA VBAT 44 µA IQ (current into VBAT and into VOUT) O VEN = VI, VO = 3.4 V VOUT 6 µA ISD Shutdown current from power source (current into VBAT and into VOUT) VEN = 0 V 0.2 5 µA VIL EN low-level input voltage 0.2 × VBAT V VIH EN high-level input voltage 0.8 × VBAT V EN input current EN = GND or VBAT 0.1 1 µA VIL LBI low-level input voltage threshold VLBI voltage decreasing 470 500 530 mV LBI input hysteresis 10 mV II LBI input current 0.01 0.1 µA VOL LBO low-level output voltage VLBI = 0 V, VO = 3.3 V, IOL = 50 µA 0.04 0.2 V LBO output leakage current VLBI = 650 mV, VLBO = 3.3 V 0.01 1 µA IFB FB input bias current (TPS61000 only) VFB = 500 mV 0.01 0.1 µA PARAMETER MEASUREMENT INFORMATION List of Components: IC1: Only fixed output versions (unless otherwise noted) L1: Coilcraft DO3308P–333 D1: Motorola Schottky Diode MBRM120LT3 CI: Ceramic CO: Ceramic 5 6 TPS6100x 9 8 1 10 3 2 7 4 SW VBAT LBI NC EN VOUT LBO FB COMP GND Low Battery Warning R4 10 k Ω R3 ON OFF R2 R1 Ci 10 µF L1 D1 C1 100 pF C2 33 nF Co 22 µF 33 µH Figure 1. Circuit Used For Typical Characteristics Measurements |
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