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2SB1190 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SB1190 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2 / 3 page  JMnic Product Specification 2 Silicon PNP Power Transistors 2SB1190 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-5mA , B=0 -150 V V(BR)EBO Emitter-base breakdown voltage IE=-0.5mA ,IC=0 -6 V VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA -1.0 V VBE Base-emitter on voltage IC=-300mA ; VCE=-10V -1.0 V ICBO Collector cut-off current VCB=-200V; IE=0 -50 μA IEBO Emitter cut-off current VEB=-4V; IC=0 -50 μA hFE-1 DC current gain IC=-100mA ; VCE=-10V 60 240 hFE-2 DC current gain IC=-300mA ; VCE=-10V 50 COB Output capacitance IE=0 ; VCB=-10V,f=1MHz 35 pF fT Transition frequency IC=-100mA ; VCE=-10V 20 MHz hFE-1 Classifications Q P 60-140 100-240 |
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