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2SB1149 Datasheet(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SB1149 Datasheet(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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1 / 3 page  JMnic Product Specification Silicon PNP Power Transistors 2SB1149 DESCRIPTION ・With TO-126 package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage APPLICATIONS ・For use in operating from IC without predriver ,such as hammer driver PINNING(See Fig.2) PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -8 V IC Collector current (DC) -3.0 A ICM Collector current-peak -5.0 A Ta=25℃ 1.3 PD Total power dissipation TC=25℃ 15 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ |
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