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ASM3I622S00EG-16-TT Datasheet(PDF) 5 Page - PulseCore Semiconductor |
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ASM3I622S00EG-16-TT Datasheet(HTML) 5 Page - PulseCore Semiconductor |
5 / 15 page May 2008 ASM3P622S00B/E rev 0.5 Low Frequency Timing-Safe™ Peak EMI Reduction IC 5 of 15 Notice: The information in this document is subject to change without notice. Spread Spectrum Control and Input-Output Skew Table Device Input Frequency SS % Deviation Input-Output Skew (±TSKEW) 0 ±0.25 % 0.0625 ASM3P622S00B/E 12MHz 1 ±0.50 % 0.125 Note: TSKEW is measured in units of the Clock Period Absolute Maximum Ratings Symbol Parameter Rating Unit VDD Supply Voltage to Ground Potential -0.5 to +4.6 VIN DC Input Voltage (CLKIN) -0.5 to +7 V TSTG Storage temperature -65 to +125 °C Ts Max. Soldering Temperature (10 sec) 260 °C TJ Junction Temperature 150 °C TDV Static Discharge Voltage (As per JEDEC STD22- A114-B) 2 KV Note: These are stress ratings only and are not implied for functional use. Exposure to absolute maximum ratings for prolonged periods of time may affect device reliability. Operating Conditions Parameter Description Min Max Unit VDD Supply Voltage 3.0 3.6 V TA Operating Temperature (Ambient Temperature) -40 +85 °C CL Load Capacitance 30 pF CIN Input Capacitance 7 pF Electrical Characteristics Parameter Description Test Conditions Min Typ Max Unit VIL Input LOW Voltage 5 0.8 V VIH Input HIGH Voltage 5 2.0 V IIL Input LOW Current VIN = 0V 50 µA IIH Input HIGH Current VIN = VDD 100 µA VOL Output LOW Voltage 6 IOL = 8mA 0.4 V VOH Output HIGH Voltage 6 IOH = -8mA 2.4 V IDD Supply Current Unloaded outputs 18 mA Zo Output Impedance 23 Ω Note: 5. CLKIN input has a threshold voltage of VDD/2 6. Parameter is guaranteed by design and characterization. Not 100% tested in production |
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Similar Description - ASM3I622S00EG-16-TT |
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