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ASM3I622S01JG-08-ST Datasheet(PDF) 4 Page - PulseCore Semiconductor |
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ASM3I622S01JG-08-ST Datasheet(HTML) 4 Page - PulseCore Semiconductor |
4 / 12 page May 2007 ASM3P622S01B/J rev 0.4 Low Frequency Timing-Safe™ Peak EMI Reduction IC 4 of 12 Notice: The information in this document is subject to change without notice. Absolute Maximum Ratings Symbol Parameter Rating Unit VDD Voltage on any pin with respect to Ground -0.5 to +4.6 V TSTG Storage temperature -65 to +125 °C Ts Max. Soldering Temperature (10 sec) 260 °C TJ Junction Temperature 150 °C TDV Static Discharge Voltage (As per JEDEC STD22- A114-B) 2 KV Note: These are stress ratings only and are not implied for functional use. Exposure to absolute maximum ratings for prolonged periods of time may affect device reliability. Operating Conditions for ASM3P622S01B/J Device Parameter Description Min Max Unit VDD Supply Voltage 3.0 3.6 V TA Operating Temperature (Ambient Temperature) -40 +85 °C CL Load Capacitance 30 pF CIN Input Capacitance 7 pF Electrical Characteristics for ASM3P622S01B/J Parameter Description Test Conditions Min Typ Max Unit VIL Input LOW Voltage 1 0.8 V VIH Input HIGH Voltage 1 2.0 V IIL Input LOW Current VIN = 0V 50 µA IIH Input HIGH Current VIN = VDD 100 µA VOL Output LOW Voltage 2 IOL = 8mA 0.4 V VOH Output HIGH Voltage 2 IOH = -8mA 2.4 V IDD Supply Current Unloaded outputs 15 mA Zo Output Impedance 23 Ω Note: 1. CLKIN input has a threshold voltage of VDD/2 2. Parameter is guaranteed by design and characterization. Not 100% tested in production |
Similar Part No. - ASM3I622S01JG-08-ST |
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Similar Description - ASM3I622S01JG-08-ST |
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