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BCW65ALT1 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. BCW65ALT1
Description  General Purpose Transistor
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
General Purpose Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
32
Vdc
Collector – Base Voltage
VCBO
60
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
800
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR– 5 Board(1)
TA = 25°C
Derate above 25
°C
PD
225
1.8
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
556
°C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25
°C
PD
300
2.4
mW
mW/
°C
Thermal Resistance, Junction to Ambient
RqJA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
– 55 to +150
°C
DEVICE MARKING
BCW65ALT1 = EA
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, IB = 0)
V(BR)CEO
32
Vdc
Collector – Emitter Breakdown Voltage
(IC = 10 mAdc, VEB = 0)
V(BR)CES
60
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCE = 32 Vdc, IE = 0)
(VCE = 32 Vdc, IE = 0, TA = 150°C)
ICES
20
20
nAdc
µAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
20
nAdc
1. FR– 5 = 1.0
 0.75  0.062 in.
2. Alumina = 0.4
 0.3  0.024 in. 99.5% alumina.
Thermal Clad is a trademark of the Bergquist Company
Order this document
by BCW65ALT1/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BCW65ALT1
1
2
3
CASE 318 – 08, STYLE 6
SOT– 23 (TO – 236AB)
© Motorola, Inc. 1996
COLLECTOR
3
1
BASE
2
EMITTER




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