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2SB676 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SB676 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2 / 3 page  JMnic Product Specification 2 Silicon PNP Power Transistors 2SB676 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA, IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-3A ,IB=-6mA -1.5 V VBEsat Base-emitter saturation voltage IC=-3A ,IB=-6mA -2.0 V ICBO Collector cut-off current VCB=-100V, IE=0 -20 μA IEBO Emitter cut-off current VEB=-5V; IC=0 -2.5 mA hFE-1 DC current gain IC=-1A ; VCE=-2V 2000 hFE-2 DC current gain IC=-3A ; VCE=-2V 1000 Switching times ton Turn-on time 0.15 μs ts Storage time 0.80 μs tf Fall time VCE=-30V, IB1=-IB2=-6mA RL=10Ω 0.40 μs |
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