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BCP69T1 Datasheet(PDF) 2 Page - Motorola, Inc |
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BCP69T1 Datasheet(HTML) 2 Page - Motorola, Inc |
2 / 4 page BCP69T1 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = –100 µAdc, IE = 0) V(BR)CES –25 — — Vdc Collector-Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0) V(BR)CEO –20 — — Vdc Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V(BR)EBO – 5.0 — — Vdc Collector-Base Cutoff Current (VCB = – 25 Vdc, IE = 0) ICBO — — –10 µAdc Emitter-Base Cutoff Current (VEB = – 5.0 Vdc, IC = 0) IEBO — — –10 µAdc ON CHARACTERISTICS DC Current Gain (IC = – 5.0 mAdc, VCE = –10 Vdc) (IC = – 500 mAdc, VCE = –1.0 Vdc) (IC = –1.0 Adc, VCE = –1.0 Vdc) hFE 50 85 60 — — — — 375 — — Collector-Emitter Saturation Voltage (IC = –1.0 Adc, IB = –100 mAdc) VCE(sat) — — – 0.5 Vdc Base-Emitter On Voltage (IC = –1.0 Adc, VCE = –1.0 Vdc) VBE(on) — — –1.0 Vdc DYNAMIC CHARACTERISTICS Current-Gain — Bandwidth Product (IC = –10 mAdc, VCE = – 5.0 Vdc) fT — 60 — MHz TYPICAL ELECTRICAL CHARACTERISTICS 200 100 70 20 –10 –100 –1000 IC, COLLECTOR CURRENT (mA) Figure 1. DC Current Gain IC, COLLECTOR CURRENT (mA) Figure 2. Current Gain Bandwidth Product 300 200 100 30 70 IC, COLLECTOR CURRENT (mA) Figure 3. Saturation and “ON” Voltages 0 160 0 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitances 50 VCE = –1.0 V TJ = 25°C 50 –10 –100 –1000 VCE = –10 V TJ = 25°C f = 30 MHz –1.0 – 0.8 – 0.6 – 0.4 – 0.2 –1.0 –100 –1000 –10 V(BE)sat @ IC/IB = 10 TJ = 25°C V(BE)on @ VCE = –1.0 V V(CE)sat @ IC/IB = 10 120 80 40 Cob Cib – 5.0 –1.0 – 2.0 – 4.0 – 2.5 – 5.0 Cib Cob TJ = 25°C –1.0 – 2.0 –1.5 – 3.0 |
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