CHT5551PT

CHENMKO ENTERPRISE CO.,LTD

SURFACE MOUNT

NPN SILICON Transistor

VOLTAGE 160 Volts

CURRENT 0.6 Ampere

APPLICATION

FEATURE

* Suitable for high packing density.

CONSTRUCTION

*NPN SILICON Transistor

* Telephony and proferssional communction equipment.

* Other switching applications.

2004-8

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

180

V

collector-emitter voltage

open base

−

160

V

V

emitter-base voltage

open collector

6.0

collector current (DC)

−

600

mA

total power dissipation

−

350

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

−

* Small flat package. ( SOT-23 )

SOT-23

CIRCUIT

2

3

1

CONSTRUCTION

FT

.103 (2.64)

.028 (0.70)

.020 (0.50)

.055 (1.40)

.047 (1.20)

.045 (1.15)

.033 (0.85)

.086 (2.20)

(1)

(2)

(3)

Dimensions in inches and (millimeters)

SOT-23