CHT5338ZPT datasheet(2/2 Pages) CHENMKO

Part #	CHT5338ZPT

Description	NPN Silicon Transisto r

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Manufacturer	CHENMKO [Chenmko Enterprise Co. Ltd.]

Direct Link	http://www.chenmko.com

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RATING CHARACTERISTIC CURVES ( CHZ5338ZPT )

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

Tamb = 25 °C unless otherwise speciÞed.

Note

1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB = 100V

−

10

nA

IEBO

emitter cut-off current

IC = 0; VEB = 6 V

−

100

nA

hFE

DC current gain

VCE = 2 V; note 1

IC = 500mA

30

−

IC = 2.0 A

30

−

IC = 5.0 A

20

120

VCEsat

collector-emitter saturation

voltage

IC = 2.0 A; IB =200 mA

−

0.7

V

IC = 5.0 A; IB =500 mA

−

1.2

V

VBEsat

base-emitter saturation voltage

1.2

V

IC = 5.0 A; IB =500 mA

−

1.8

V

Cc

collector capacitance

IE = ie = 0; VCB =10 V; f=1 MHz

−

Ce

emitter capacitance

IC = ic = 0; VBE = 2V;

f = 1 MHz

−

fT

transition frequency

IC = 500 mA; VCE = 10 V;

f = 10 MHz

30

−

MHz

Switching times (between 10% and 90% levels);

−

100

ns

td

delay time

−

100

ns

tr

rise time

−

2.0

ns

ts

storage time

−

200

ns

tf

fall time

IC = 2.0 A; IB =200 mA

−

1000

250

pF

VCC=40V,VBE=3.0V,IC=2.0A,

IB1=200mA

VCC=40V,IC=2.0A,IB1=IB2=200mA

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