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CHT2222WPT Datasheet(PDF) 2 Page - Chenmko Enterprise Co. Ltd. |
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CHT2222WPT Datasheet(HTML) 2 Page - Chenmko Enterprise Co. Ltd. |
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2 / 6 page  THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 357 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 60 V − 10 nA IEBO IC = 0; VCB = 60 V; Tj = 125 OC − 10 uA emitter cut-off current IC = 0; VEB = 5 V − 10 nA IC = 1.0 mA; VCE = 10V IC = 10 mA; VCE = 10V 75 50 hFE DC current gain IC = 0.1 mA; VCE = 10V; note 1 35 − − − IC = 10 mA; VCE = 10V;Tamb = -55 OC 35 − IC = 150 mA; VCE = 10V 100 300 IC = 150 mA; VCE = 1.0V 50 − IC = 500 mA; VCE = 10V 40 − VCEsat collector-emitter saturation voltage IC = 150 mA; IB = 15 mA − 300 mV IC = 500 mA; IB = 50 mA − 1 V VBEsat base-emitter saturation voltage IC = 150 mA; IB = 15 mA 0.6 1.2 V IC = 500 mA; IB = 50 mA − 2.0 V Cc collector capacitance IE = ie = 0; VCB = 5 V; f = 1 MHz − 8 Ce emitter capacitance IC = ic = 0; VBE = 500 mV; f = 1 MHz − 25 pF pF fT transition frequency IC = 20 mA; VCE = 20 V; f = 100 MHz 300 − MHz F noise figure IC = 100 µA; VCE = 5 V; RS = 1 kΩ; f = 1.0 kHz − 4 dB Switching times (between 10% and 90% levels); ton turn-on time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA − 35 ns td delay time − 15 ns tr rise time − 20 ns toff turn-off time − 250 ns ts storage time − 200 ns tf fall time − 60 ns RATING CHARACTERISTIC CURVES ( CHT2222WPT ) |
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