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CHT55PT Datasheet(PDF) 2 Page - Chenmko Enterprise Co. Ltd. |
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CHT55PT Datasheet(HTML) 2 Page - Chenmko Enterprise Co. Ltd. |
2 / 2 page RATING CHARACTERISTIC CURVES ( CHT55PT ) 1. THERMAL CHARACTERISTICS Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise speciÞed. Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 357 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = -60 V − -0.1 uA IEBO emitter cut-off current IC = 0; VEB = -4 V − -0.1 uA hFE DC current gain VCE = -1.0 V; note 1 IC = -10 mA 100 − IC = -100 mA 100 − VCEsat collector-emitter saturation voltage IC = -100 mA; IB =-10 mA − − -0.25 V VBEsat base-emitter saturation voltage IC = -100 mA; VCE = -1.0 V -1.2 V Ccb collector-base capacitance IE = ie = 0; VCB =-20V ; f = 1 MHz − 3 pF fT transition frequency IC = 100 mA; VCE =-1.0 V ; f = 100 MHz 50 − MHz |
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