CHM6060RPAPT datasheet(2/2 Pages) CHENMKO

Part #	CHM6060RPAPT

Description	N-Channel Enhancement Mode Field Effect Transistor

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Manufacturer	CHENMKO [Chenmko Enterprise Co. Ltd.]

Direct Link	http://www.chenmko.com

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RATING CHARACTERISTIC CURVES ( CHM6060RPAPT )

Electrical Characteristics T

A = 25°C unless otherwise noted

Symbol

Parameter

Conditions

Min

Typ

Max

Units

OFF CHARACTERISTICS

ON CHARACTERISTICS

g FS

Forward Transconductance

VDS =10V, ID = 24A

RDS(ON)

Static Drain-Source On-Resistance

SWITCHING CHARACTERISTICS

Qgs

Gate-Source Charge

Q gd

Gate-Drain Charge

ton

Turn-On Time

nS

V

DD

= 30V

ID =30A, VGS= 10 V

20

tr

Rise Time

300

25

BVDSS

Drain-Source Breakdown Voltage

VGS = 0 V, ID = 250 µA

nA

60

V

nA

I

GSSF

DSS

S

Zero Gate Voltage Drain Current

I

VDS

Gate-Body Leakage

=

Gate-Body Leakage

60 V,

V

GS

= 20V,

= 0 V

VDS

µ

= 0 V

A

+100

-100

VGS = -20V, VDS = 0 V

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250 µA

2

V

60

tf

Fall Time

150

Qg

Total Gate Charge

19

VDS=48V, ID=30A

VGS=10V

Turn-Off Time

toff

RGEN= 7.5

Ω

(Note 2)

(Note 4)

4

S

nC

15

250

45

130

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

36

I

VSD

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage IS = 24A, VGS= 0 V

30

1.3

A

V

9

43

I

GSSR

20

m

Ω

0.9

VGS=10V, ID=24A

25

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CHM6060RPAPT Datasheet(PDF) 2 Page - Chenmko Enterprise Co. Ltd.

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