Part Name
         Description
CHEMG4PT

 Dual Digital Silicon Transistor ( 3 Page)


CHENMKO
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CHEMG4PT
CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
VOLTAGE 50 Volts
CURRENT 100 mAmpere
CIRCUIT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
Supply voltage
50
V
VIN
Input voltage
-5
V
IO
junction - Ambient Air
100
IC(Max.)
DC Output current
100
mA
PTOT
Total power dissipation
Tamb
≤ 25 OC, Note 1
200
mW
TSTG
Storage temperature
−55
+150
OC
TJ
R
θJ-S
Thermal resistance
Junction temperature
150
OC
625
OC/W
APPLICATION
FEATURE
* High current gain.
* Suitable for high packing density.
* Switching circuit, Inverter, Interface circuit, Driver circuit.
* Low colloector-emitter saturation.
* High saturation current capability.
* Both the CHDTC114T in one package.
* Built in bias resistor(R1=10k
Ω, Typ. )
Dual Digital Silicon Transistor
2
1
R1
R1
4
5
3
2004-07
* Small surface mounting type. (SOT-553)
SOT553
MARKING
* G4
Dimensions in millimeters
SOT553
(4)
(5)
(3)
(1)
1.5~1.7
0.5~0.6
0.19~0.18
0.50
0.50
0.9~1.1
1.5~1.7
0.15~0.3
1.1~1.3



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