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CHEMF7PT Datasheet(PDF) 2 Page - Chenmko Enterprise Co. Ltd. |
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CHEMF7PT Datasheet(HTML) 2 Page - Chenmko Enterprise Co. Ltd. |
2 / 5 page CHDTC123E LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). Note 1. Characteristics of built-in transistor. 2SC5585 CHARACTERISTICS Tamb =25 °C unless otherwise speciÞed. CHDTC123E CHARACTERISTICS Note Pulse test: tp ≤300uS; δ≤0.02. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCC Supply voltage − 50 V VIN Input voltage -10 +20 V IO − 100 IC(Max.) DC Output current − 100 mA PC − 150 mW TSTG Storage temperature −55 +150 OC TJ Junction temperature − 150 OC SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT BVEBO Collector-emitter breakdown voltage − 12 V Collector-base breakdown voltage 15 − − − V V Emitter-base breakdown voltage Collector cut-off current − − 100 nA Emitter cut-off current Collector-emitter saturation voltage hFE DC current gain − 100 270 90 mV Collector output capacitance − − 7.5 f T Transition frequency − − 320 MHz SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VIoff) Input off voltage IO=100uA; VCC=5.0V − 0.5 V VI(on) Input on voltage IO=20mA; VO=0.3V 3.0 − − − V V VO(on) Output voltage IO=10mA; II=0.5mA − 0.3 0.1 II Input current VI=5V − − 3.8 mA IC(off) Output current R1 Input resistor VI=0V; VCC=50V G1 DC current gain IO=20mA; VO=5.0V − 0.5 20 − K Ω R2/R1 Resistor ratio 0.8 1.2 − − 2.2 1.0 uA f T Transition frequency IE=-5mA, VCE=10.0V f=100MHz = − − 250 MHz Tamb =25 °C unless otherwise speciÞed. 6 NOTE.1 Power dissipation NOTE.2 2. Each terminal mounter on a recommended land. BVCBO BVCEO ICBO IEBO Cob VCE(sat) − − nA 680 − − − pF VCE=2V,IE=-10mA,f=100MHZ VCB=10V,IE=0mA,f=1MHZ IC=200mA,IB=10mA VCE=2V,IC=10mA VCB=15V VEB=6V IE=10uA IC=10uA IC=1mA Note 1.Pulse test: tp ≤300uS; δ≤0.02. − − 250 − − − |
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