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2SA758 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2SA758 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page JMnic Product Specification 2 Silicon PNP Power Transistors 2SA758 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=∞ -110 V V(BR)CBO Collector-base breakdown voltage IC=-5mA ,IE=0 -130 V V(BR)EBO Emitter-base breakdown voltage IE=-5mA ,IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-5A; IB=-1A -1.8 V VBE Base-emitter on voltage IC=-1A ; VCE=-5V -1.5 V ICBO Collector cut-off current VCB=-30V; IE=0 -1 mA hFE-1 DC current gain IC=-1A ; VCE=-5V 25 200 hFE-2 DC current gain IC=-5A ; VCE=-5V 20 fT Transition frequency IC=-1A ; VCE=-5V 20 MHz hFE-1 Classifications A B C 25-60 50-120 100-200 |
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