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2N5881 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2N5881 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
2 / 3 page Product Specification www.jmnic.com JMnic Silicon NPN Power Transistors 2N5881 2N5882 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N5881 60 VCEO(sus) Collector-emitter sustaining voltage 2N5882 IC=0.2A ;IB=0 80 V VCEsat-1 Collector-emitter saturation voltage IC=7A;IB=0.7A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=15A;IB=3.75A 4.0 V VBEsat Collector-emitter saturation voltage IC=15A;IB=3.75A 2.5 V VBE Collector-emitter on voltage IC=6A ; VCE=4V 1.5 V ICBO Collector cut-off current VCB=ratedVCBO; IB=0 0.5 mA 2N5881 VCE=30V; IB=0 ICEO Collector cut-off current 2N5882 VCE=40V; IB=0 1.0 mA ICEX Collector cut-off current VCE=ratedVCE; VBE=1.5V TC=150℃ 0.5 5.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 mA hFE-1 DC current gain IC=2A ; VCE=4V 35 hFE-2 DC current gain IC=6A ; VCE=4V 20 100 hFE-3 DC current gain IC=15A ; VCE=4V 4 fT Trainsistion frequency IC=1A ; VCE=10V 4 MHz |
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