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BC337 Datasheet(PDF) 1 Page - Motorola, Inc

Part No. BC337
Description  Amplifier Transistor
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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Motorola Small–Signal Transistors, FETs and Diodes Device Data
Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
BC337
BC338
Unit
Collector – Emitter Voltage
VCEO
45
25
Vdc
Collector – Base Voltage
VCBO
50
30
Vdc
Emitter – Base Voltage
VEBO
5.0
Vdc
Collector Current — Continuous
IC
800
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watt
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = 10 mA, IB = 0)
BC337
BC338
V(BR)CEO
45
25
Vdc
Collector – Emitter Breakdown Voltage
(IC = 100 µA, IE = 0)
BC337
BC338
V(BR)CES
50
30
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mA, IC = 0)
V(BR)EBO
5.0
Vdc
Collector Cutoff Current
(VCB = 30 V, IE = 0)
BC337
(VCB = 20 V, IE = 0)
BC338
ICBO
100
100
nAdc
Collector Cutoff Current
(VCE = 45 V, VBE = 0)
BC337
(VCE = 25 V, VBE = 0)
BC338
ICES
100
100
nAdc
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
IEBO
100
nAdc
Order this document
by BC337/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
BC337,-16,-25,-40
BC338,-16,-25,-40
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
1
2
3
© Motorola, Inc. 1996
COLLECTOR
1
2
BASE
3
EMITTER




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