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2N5607 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2N5607 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2 / 3 page  Product Specification www.jmnic.com JMnic Silicon PNP Power Transistors 2N5605 2N5607 2N5609 2N5611 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N5605 60 2N5607/5609 80 VCEO Collector-emitter sustaining voltage 2N5611 IC=50mA ;IB=0 100 V VCEsat Collector-emitter saturation voltage IC=1A; IB=0.1A 0.5 V VBE Base-emitter on voltage IC=2.5A ; VCE=5V 1.5 V ICBO Collector cut-off current VCB=Rated VCBO; IE=0 0.1 mA ICEO Collector cut-off current VCE= Rated VCEO,IB=0 1.0 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA 2N5605/5609 70 200 hFE DC current gain 2N5607/5611 IC=2.5A ; VCE=5V 30 90 2N5605/5609 70 fT Transition frequency 2N5607/5611 IC=0.5A ; VCE=10V 60 MHz |
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