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2N5603 Datasheet(PDF) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2N5603 Datasheet(HTML) 1 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
1 / 3 page Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5597 2N5599 2N5601 2N5603 DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Low collector-emitter saturation voltage APPLICATIONS ・For high frequency power amplifier ; audio power amplifier and drivers. PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5597 60 2N5599/5601 80 VCBO Collector-base voltage 2N5603 Open emitter 100 V 2N5597 80 2N5599/5601 100 VCEO Collector-emitter voltage 2N5603 Open base 120 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 2 A PD Total power dissipation TC=25℃ 20 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-c Thermal resistance junction to case 4.37 ℃/W JMnic |
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