BC212,B BC213 BC214

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS

DC Current Gain

(IC = –10 µAdc, VCE = –5.0 Vdc)

BC212

BC213

BC214

(IC = –2.0 mAdc, VCE = –5.0 Vdc)

BC212

BC213

BC214

(IC = –100 mAdc, VCE = –5.0 Vdc)(1)

BC212, BC214

BC213

hFE

40

40

100

60

80

140

—

—

—

—

—

—

—

—

120

140

—

—

—

—

—

600

—

—

—

Collector – Emitter Saturation Voltage

(IC = –10 mAdc, IB = –0.5 mAdc)

(IC = –100 mAdc, IB = –5.0 mAdc)(1)

VCE(sat)

—

—

–0.10

–0.25

—

–0.6

Vdc

Base – Emitter Saturation Voltage

(IC = –100 mAdc, IB = –5.0 mAdc)

VBE(sat)

—

–1.0

–1.4

Vdc

Base–Emitter On Voltage

(IC = –2.0 mAdc, VCE = –5.0 Vdc)

VBE(on)

–0.6

–0.62

–0.72

Vdc

DYNAMIC CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = –10 mAdc, VCE = –5.0 Vdc, f = 100 MHz)

BC212

BC214

BC213

fT

—

—

—

280

320

360

—

—

—

MHz

Common–Base Output Capacitance

(VCB = –10 Vdc, IC = 0, f = 1.0 MHz)

Cob

—

—

6.0

pF

Noise Figure

(IC = –0.2 mAdc, VCE = –5.0 Vdc,

RS = 2.0 kΩ , f = 1.0 kHz)

BC214

(IC = –0.2 mAdc, VCE = –5.0 Vdc,

RS = 2.0 kΩ, f = 1.0 kHz, f = 200 Hz)

BC212, BC213

NF

—

—

—

—

2

10

dB

Small–Signal Current Gain

(IC = –2.0 mAdc, VCE = –5.0 Vdc, f = 1.0 kHz)

BC212

BC213

BC214

BC212B

hfe

60

80

140

200

—

—

—

—

—

—

—

400

—

1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.