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TC213-30 Datasheet(PDF) 2 Page - Texas Instruments |
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TC213-30 Datasheet(HTML) 2 Page - Texas Instruments |
2 / 21 page TC213 1024- × 512-PIXEL CCD IMAGE SENSOR SOCS013B – AUGUST 1989 – REVISED DECEMBER 1991 2-2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 description (continued) Gated floating-diffusion detection structures are used with each serial register to convert charge to signal voltage. External resets allow the application of off-chip correlated clamp sample-and-hold amplifiers for low-noise performance. To provide high output-drive capability, both outputs are buffered by low-noise, two-stage, source-follower amplifiers. These two output signals can provide a data rate of 20 megapixels per second when combined off chip. An output of 30 frames per second with one field per frame is typical. At room temperature, the readout noise is 55 elecrons and a minimum dynamic range of 60 dB is available. The blooming protection incorporated into the sensor is based on recombining excess charge with charge of opposite polarity in the substrate. This antiblooming is activated by supplying clocking pulses to the antiblooming gate, which is an integral part of each image-sensing element. The storage area antiblooming gate is clocked only for charge transfer in normal use. The TC213 is built using TI-proprietary virtual-phase technology, which provides devices with high blue response, low dark signal, good uniformity, and single-phase clocking. The TC213 is characterized for operation from –10 °C to 40°C. functional block diagram 24 Dark Reference Elements Clearing Drain Amplifiers OUT1 OUT2 RST2 IAG TDB 19 21 6 3 1 2 AMP GND CDB 8 SRG2 SRG1 TRG IDB 11 9 10 ABGS 13 SAG ABGI 14 15 Blooming Protection Image Area With Top Drain 12 Dummy Elements Multiplexer, Transfer Gates, and Serial Registers 12 IAG 16 ADB 4 ABGI 22 RST1 7 SAG 23 ABGS 24 Storage Area |
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