2N7002LT1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

ON CHARACTERISTICS(2)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

VGS(th)

1.0

—

2.5

Vdc

On–State Drain Current

(VDS ≥ 2.0 VDS(on), VGS = 10 Vdc)

ID(on)

500

—

—

mA

Static Drain–Source On–State Voltage

(VGS = 10 Vdc, ID = 500 mAdc)

(VGS = 5.0 Vdc, ID = 50 mAdc)

VDS(on)

—

—

—

—

3.75

0.375

Vdc

Static Drain–Source On–State Resistance

(VGS = 10 V, ID = 500 mAdc)

TC = 25°C

TC = 125°C

(VGS = 5.0 Vdc, ID = 50 mAdc) TC = 25°C

TC = 125°C

rDS(on)

—

—

—

—

—

—

—

—

7.5

13.5

7.5

13.5

Ohms

Forward Transconductance

(VDS ≥ 2.0 VDS(on), ID = 200 mAdc)

gFS

80

—

—

mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Ciss

—

—

50

pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Coss

—

—

25

pF

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Crss

—

—

5.0

pF

SWITCHING CHARACTERISTICS(2)

Turn–On Delay Time

(VDD = 25 Vdc, ID ^ 500 mAdc,

td(on)

—

—

30

ns

Turn–Off Delay Time

( DD

, D

,

RG = 25 Ω, RL = 50 Ω)

td(off)

—

—

40

ns

BODY–DRAIN DIODE RATINGS

Diode Forward On–Voltage

(IS = 11.5 mAdc, VGS = 0 V)

VSD

—

—

–1.5

Vdc

Source Current Continuous

(Body Diode)

IS

—

—

–115

mAdc

Source Current Pulsed

ISM

—

—

– 800

mAdc

2. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2.0%.