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SN65LVDS179DGKR Datasheet(PDF) 2 Page - Texas Instruments |
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SN65LVDS179DGKR Datasheet(HTML) 2 Page - Texas Instruments |
2 / 24 page www.ti.com DESCRIPTION (CONTINUED) FUNCTION TABLES SN65LVDS179,, SN65LVDS180 SN65LVDS050, SN65LVDS051 SLLS301M – APRIL 1998 – REVISED JANUARY 2007 These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. These devices offer various driver, receiver, and enabling combinations in industry-standard footprints. Because these devices are intended for use in simplex or distributed simplex bus structures, the driver enable function does not put the differential outputs into a high-impedance state but rather disconnects the input and reduces the quiescent power used by the device. (For these functions with a high-impedance driver output, see the SN65LVDM series of devices.) All devices are characterized for operation from -40°C to 85°C. AVAILABLE OPTIONS(1) PACKAGE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE (D) (DGK) (PW) SN65LVDS050D — SN65LVDS050PW SN65LVDS051D — SN65LVDS051PW SN65LVDS179D SN65LVDS179DGK — SN65LVDS180D — SN65LVDS180PW (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI Web site at www.ti.com. SN65LVDS179 RECEIVER INPUTS OUTPUT(1) VID = VA - VB R VID≥ 50 mV H 50 mV < VID < 50 mV ? VID≤ -50 mV L Open H (1) H = high level, L = low level, ? = indeterminate SN65LVDS179 DRIVER(1) INPUT OUTPUTS D Y Z L L H H H L Open L H (1) H = high level, L = low level 2 Submit Documentation Feedback |
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