EID1616-3

5 GHz 3-Watt Internally-Matched Power FET

Specifications are subject to change without notice.

UPDATED: 07/24/2008

16.2–16.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

page 1 of 2

Phone: 408-737-1711 Fax: 408-737-1868 Web:

YYWW

ALL DIMENSIONS IN INCHES

.512

.382

.094

Excelics

.650±.008

.129

SN

GATE

.060 MIN.

.045

.070 ±.008

.004

.022

.060 MIN.

DRAIN

.319

FEATURES

•

16.2-16.5 GHz Bandwidth

•

Input/Output Impedance Matched to 50 Ohms

•

+35.0 dBm Output Power at 1dB Compression

•

6.0 dB Power Gain at 1dB Compression

•

25% Power Added Efficiency

•

Hermetic Metal Flange Package

•

Caution! ESD sensitive device.

EID1616-3

SYMBOL

PARAMETERS/TEST CONDITIONS

1

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression

f = 16.2-16.5GHz

34.5

35.0

dBm

Gain at 1dB Compression

f = 16.2-16.5GHz

5.0

6.0

dB

∆G

Gain Flatness

f = 16.2-16.5GHz

±0.6

dB

PAE

Power Added Efficiency at 1dB Compression

f = 16.2-16.5GHz

25

%

Drain Current at 1dB Compression

f = 16.2-16.5GHz

700

900

mA

Saturated Drain Current

1100

1500

mA

Pinch-off Voltage

-2.5

-4.0

V

Thermal Resistance

2

8.5

10.5

Notes: 1. Tested with 100 Ohm gate resistor.

2. Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION

1,2

SYMBOL

CHARACTERISTIC

VALUE

Drain to Source Voltage

10 V

Gate to Source Voltage

-4.5 V

Drain Current

IDSS

Forward Gate Current

20 mA

Input Power

@ 3dB compression

Total Power Dissipation

11.5 W

Channel Temperature

150°C

Storage Temperature

-65/+150°C

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

www.excelics.com

Revised July 2008