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EID0910A1-12 Datasheet(PDF) 1 Page - Excelics Semiconductor, Inc. |
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EID0910A1-12 Datasheet(HTML) 1 Page - Excelics Semiconductor, Inc. |
1 / 2 page EID0910A1-12 UPDATED 07/12/2007 9.50-10.50 GHz 12-Watt Internally Matched Power FET Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 2 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised July 2007 YYWW .827±.010 .421 .004 .669 .105±.008 .168±.010 ALL DIMENSIONS IN INCHES .125 .508±.008 .442 SN .004 .063 .024 .120 MIN Excelics .120 MIN FEATURES • 9.50– 10.50GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +41 dBm Output Power at 1dB Compression • 8.0 dB Power Gain at 1dB Compression • 28% Power Added Efficiency • Hermetic Metal Flange Package • 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) Caution! ESD sensitive device. SYMBOL PARAMETERS/TEST CONDITIONS 1 MIN TYP MAX UNITS P1dB Output Power at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 3200mA 40 41 dBm G1dB Gain at 1dB Compression f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 3200mA 7.0 8.0 dB ∆G Gain Flatness f = 9.50-10.50GHz VDS = 10 V, IDSQ ≈ 3200mA ±0.6 dB PAE Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 3200mA f = 9.50-10.50GHz 28 % Id1dB Drain Current at 1dB Compression f = 9.50-10.50GHz 3800 4300 mA IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 6400 8000 mA VP Pinch-off Voltage VDS = 3 V, IDS = 64 mA -1.2 -2.5 V RTH Thermal Resistance 2 2.5 3.0 oC/W Notes: 1. Tested with 50 Ohm gate resistor. 2. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING 1,2 SYMBOL CHARACTERISTIC VALUE VDS Drain to Source Voltage 10 V VGS Gate to Source Voltage -3.0 V IDS Drain Current IDSS IGSF Forward Gate Current 220 mA PIN Input Power @ 3dB compression PT Total Power Dissipation 50 W TCH Channel Temperature 175°C TSTG Storage Temperature -65/+175°C Notes: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. EID0910A1-12 |
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