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NCP1252BDR2G Datasheet(PDF) 4 Page - ON Semiconductor |
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NCP1252BDR2G Datasheet(HTML) 4 Page - ON Semiconductor |
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4 / 17 page  NCP1252 http://onsemi.com 4 Table 4. ELECTRICAL CHARATERISTICS (VCC = 15 V, RT = 43 kW, CDRV = 1 nF. For typical values TJ = 25°C, for min/max values TJ = –25°C to +125°C, unless otherwise noted) Characteristics Test Condition Symbol Min Typ Max Unit SUPPLY SECTION AND VCC MANAGEMENT Startup threshold at which driving pulses are authorized VCC increasing VCC(on) 9.4 10 10.6 V Minimum Operating voltage at which driving pulses are stopped VCC decreasing VCC(off) 8.4 9 9.6 V Hysteresis between VCC(on) and VCC(min) VCC(HYS) 0.9 1.0 − V Start−up current, controller disabled VCC < VCC(on) & VCC increasing from zero ICC1 − − 100 mA Internal IC consumption, controller switching Fsw =100 kHz, DRV = open ICC2 0.5 1.4 2.2 mA Internal IC consumption, controller switching Fsw =100 kHz, CDRV = 1 nF ICC3 2.0 2.7 3.5 mA CURRENT COMPARATOR Current Sense Voltage Threshold VILIM 0.92 1 1.08 V Leading Edge Blanking Duration tLEB − 160 − ns Input Bias Current (Note 3) Ibias − 0.02 − mA Propagation delay From CS detected to gate turned off tILIM − 70 150 ns Internal Ramp Compensation Voltage level @ 25°C (Note 4) Vramp 3.15 3.5 3.85 V Internal Ramp Compensation resistance to CS pin @ 25°C (Note 4) Rramp − 26.5 − kW INTERNAL OSCILLATOR Oscillator Frequency RT = 43 kW & DRV pin = 47 kW fOSC 92 100 108 kHz Oscillator Frequency RT = 8.5 kW & DRV pin = 47 kW fOSC 425 500 550 kHz Frequency Modulation in percentage of fOSC (Note 3) fjitter − ±5 − % Frequency modulation Period (Note 3) Tswing − 3.33 − ms Maximum operating frequency (Note 3) fMAX 500 − − kHz Maximum duty−cycle – A version DCmaxA 45.6 48 49.6 % Maximum duty−cycle – B version DCmaxB 76 80 84 % FEEDBACK SECTION Internal voltage division from FB to CS set- point FBdiv − 3 − − Internal pull−up resistor Rpull−up − 3.5 − kW FB pin maximum current FB pin = GND IFB 1.5 − − mA Internal feedback impedance from FB to GND ZFB − 40 − kW Open loop feedback voltage FB pin = open VFBOL − 6.0 − V Internal Diode forward voltage (Note 3) Vf − 0.75 − V DRIVE OUTPUT DRV Source resistance RSRC − 10 30 W DRV Sink resistance RSINK − 6 19 W Output voltage rise−time VCC = 15 V, CDRV = 1nF, 10 to 90% tr − 26 − ns 3. Guaranteed by design 4. Vramp, Rramp Guaranteed by design |
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