EIC0910-8

UPDATED 08/21/2007

9.50-10.50GHz 8-Watt Internally Matched Power FET

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

page 1 of 4

Revised October 2007

FEATURES

•

9.50–10.50GHz Bandwidth

•

Input/Output Impedance Matched to 50 Ohms

•

+39.5 dBm Output Power at 1dB Compression

•

7.5 dB Power Gain at 1dB Compression

•

30% Power Added Efficiency

•

-43 dBc IM3 at PO = 28.5 dBm SCL

•

Caution! ESD sensitive device.

SYMBOL

PARAMETERS/TEST CONDITIONS

1

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression

f = 9.5-10.5GHz

38.5

39.5

dBm

Gain at 1dB Compression

f = 9.5-10.5GHz

6.5

7.5

dB

∆G

Gain Flatness

f = 9.5-10.5GHz

±0.6

dB

PAE

Power Added Efficiency at 1dB Compression

f = 9.5-10.5GHz

30

%

Drain Current at 1dB Compression f = 9.5-10.5GHz

2200

2600

mA

IM3

Output 3rd Order Intermodulation Distortion

∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L

2

f =10.5GHz

-40

-43

dBc

Saturated Drain Current

3700

4300

mA

Pinch-off Voltage

-2.5

-4.0

V

Thermal Resistance

3

2.5

3.5

Note: 1. Tested with 100 Ohm gate resistor.

2. S.C.L. = Single Carrier Level.

3. Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING FOR EFE

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

15V

10V

Vgs

Gate-Source Voltage

-5V

-4V

Igf

Forward Gate Current

96mA

28.8mA

Igr

Reverse Gate Current

-19.2mA

-4.8mA

Pin

Input Power

39dBm

@ 3dB Compression

Tch

Channel Temperature

175C

175C

Tstg

Storage Temperature

-65C to +175C

-65C to +175C

Pt

Total Power Dissipation

43W

43W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.