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EIC0910-8 Datasheet(PDF) 1 Page - Excelics Semiconductor, Inc. |
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EIC0910-8 Datasheet(HTML) 1 Page - Excelics Semiconductor, Inc. |
1 / 4 page EIC0910-8 UPDATED 08/21/2007 9.50-10.50GHz 8-Watt Internally Matched Power FET Specifications are subject to change without notice. Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085 page 1 of 4 Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com Revised October 2007 FEATURES • 9.50–10.50GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +39.5 dBm Output Power at 1dB Compression • 7.5 dB Power Gain at 1dB Compression • 30% Power Added Efficiency • -43 dBc IM3 at PO = 28.5 dBm SCL • 100% Tested for DC, RF, and RTH ELECTRICAL CHARACTERISTICS (Ta = 25°C) Caution! ESD sensitive device. SYMBOL PARAMETERS/TEST CONDITIONS 1 MIN TYP MAX UNITS P1dB Output Power at 1dB Compression f = 9.5-10.5GHz VDS = 10 V, IDSQ ≈ 2200mA 38.5 39.5 dBm G1dB Gain at 1dB Compression f = 9.5-10.5GHz VDS = 10 V, IDSQ ≈ 2200mA 6.5 7.5 dB ∆G Gain Flatness f = 9.5-10.5GHz VDS = 10 V, IDSQ ≈ 2200mA ±0.6 dB PAE Power Added Efficiency at 1dB Compression VDS = 10 V, IDSQ ≈ 2200mA f = 9.5-10.5GHz 30 % Id1dB Drain Current at 1dB Compression f = 9.5-10.5GHz 2200 2600 mA IM3 Output 3rd Order Intermodulation Distortion ∆f = 10 MHz 2-Tone Test; Pout = 28.5 dBm S.C.L 2 VDS = 10 V, IDSQ ≈ 65% IDSS f =10.5GHz -40 -43 dBc IDSS Saturated Drain Current VDS = 3 V, VGS = 0 V 3700 4300 mA VP Pinch-off Voltage VDS = 3 V, IDS = 40 mA -2.5 -4.0 V RTH Thermal Resistance 3 2.5 3.5 oC/W Note: 1. Tested with 100 Ohm gate resistor. 2. S.C.L. = Single Carrier Level. 3. Overall Rth depends on case mounting. ABSOLUTE MAXIMUM RATING FOR EFE SYMBOLS PARAMETERS ABSOLUTE 1 CONTINUOUS 2 Vds Drain-Source Voltage 15V 10V Vgs Gate-Source Voltage -5V -4V Igf Forward Gate Current 96mA 28.8mA Igr Reverse Gate Current -19.2mA -4.8mA Pin Input Power 39dBm @ 3dB Compression Tch Channel Temperature 175C 175C Tstg Storage Temperature -65C to +175C -65C to +175C Pt Total Power Dissipation 43W 43W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. |
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