EIB1415-0.3P

UPDATED 8/31/2006

14.0-14.5 GHz 0.3-Watt Internally Matched Power FET

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

page 1 of 1

Revised August 2006

0.433 0.362

0.256

0.070

MIN

0.080

MIN

0.250

0.100

0.025

0.051

0.004

0.200

GATE

DRAIN

0.020

0.080

ALL DIMENSIONS IN INCHES

FEATURES

•

14.0– 14.5GHz Bandwidth

•

Input/Output Impedance Matched to 50 Ohms

•

+26.0 dBm Output Power at 1dB Compression

•

8.0 dB Power Gain at 1dB Compression

•

32% Power Added Efficiency

•

Non - Hermetic Metal Flange Package

Caution! ESD sensitive device.

SYMBOL

PARAMETERS/TEST CONDITIONS

1

MIN

TYP

MAX

UNITS

Output Power at 1dB Compression

f = 14.0-14.5GHz

24.0

26.0

dBm

Gain at 1dB Compression

f = 14.0-14.5GHz

7.0

8.0

dB

∆G

Gain Flatness

f = 14.0-14.5GHz

±0.6

dB

PAE

Power Added Efficiency at 1dB Compression

f = 14.0-14.5GHz

32

%

Drain Current at 1dB Compression

f = 14.0-14.5GHz

130

150

mA

IM3

Output 3rd Order Intermodulation Distortion

∆f=10MHz 2-Tone Test. Pout=14.0 dBm S.C.L

f = 14.5GHz

-43

-46

dBc

Saturated Drain Current

210

300

mA

Pinch-off Voltage

-2.0

-3.5

V

Thermal Resistance

3

55

60

Note: 1) Tested with 200 Ohm gate resistor.

2) S.C.L. = Single Carrier Level.

3) Overall Rth depends on case mounting.

ABSOLUTE MAXIMUM RATING

1,2

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

12

8V

Vgs

Gate-Source Voltage

-5

-4V

Igsf

Forward Gate Current

3.6mA

1.2mA

Igsr

Reverse Gate Current

-0.6mA

-0.2mA

Pin

Input Power

24.0dBm

@ 3dB Compression

Tch

Channel Temperature

175

175

Tstg

Storage Temperature

-65 to +175

-65 to +175

Pt

Total Power Dissipation

2.5W

2.5W

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics

EIB1415-0.3P

YYWW

SN