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AMIS30624C6245RG Datasheet(PDF) 10 Page - ON Semiconductor |
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AMIS30624C6245RG Datasheet(HTML) 10 Page - ON Semiconductor |
10 / 56 page AMIS-30624 11.0 Typical Application AMIS-30624 V BAT 2 MOTXP PC20060925.5 100 nF MOTXN MOTYP MOTYN 11 VDD VBB 12 VCP SWI CPP CPN 9 8 SDA SCK 10 HW 18 M 16 15 13 20 3 VBB 19 1 220 nF 1 k Ω Connect to V BAT or GND Connect to V BAT or GND 1 k Ω 100 μF R 2 C 5 C 6 C 3 C 4 C 1 C 2 1 μF GND 7 14 17 TST2 TST1 6 5 4 R 1 I2C bus Figure 6: Typical Application Diagram Notes: (1) All resistors are ± 5%, ¼ W. (2) Depending on the application, the ESR value and working voltage of C1 must be carefully chosen. (3) C2 must be a ceramic capacitor to assure low ESR. (4) C3 and C4 must be as close as possible to pins CPN, CPP, VCP, and VBB to reduce EMC radiation. (5) C5 and C6 must be close to pins VBB and GND. 12.0 Positioning Parameters 12.1 Stepping Modes One of four possible stepping modes can be programmed: • Half stepping • 1/4 micro-stepping • 1/8 micro-stepping • 1/16 micro-stepping Rev. 4 | Page 10 of 56 | www.onsemi.com |
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