LBCW69LT1G datasheet(1/7 Pages) LRC

Part #	LBCW69LT1G

Description	General Purpose Transistors PNP Silicon

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Manufacturer	LRC [Leshan Radio Company]

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LESHAN RADIO COMPANY, LTD.

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MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

V

CEO

– 45

Vdc

Emitter–Base Voltage

V

EBO

– 5.0

Vdc

Collector Current — Continuous

I C

– 100

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

PD

225

mW

TA = 25°C

Derate above 25°C

1.8

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

556

°C/W

Total Device Dissipation

PD

300

mW

Alumina Substrate, (2) TA = 25°C

Derate above 25°C

2.4

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

417

°C/W

Junction and Storage Temperature

TJ , Tstg

–55 to +150

°C

DEVICE MARKING

LBCW69LT1G = H1; LBCW70LT1G= H2

ELECTRICAL CHARACTERISTICS (T

A = 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage (IC = –2.0 mAdc, IB = 0 )

V (BR)CEO

– 45

—

Vdc

Collector–Emitter Breakdown Voltage (IC = –100

µAdc, V

EB = 0 )

V (BR)CES

– 50

—

Vdc

Emitter–Base Breakdown Voltage (I E= –10

µAdc, I

C = 0)

V (BR)EBO

– 5.0

—

Vdc

Collector Cutoff Current

I CEO

(VCE = –20 Vdc, I E = 0 )

—

– 100

nAdc

(VCE = –20 Vdc, I E = 0 , TA = 100°C)

—

– 10

µAdc

1. FR– 5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

1

3

2

General Purpose Transistors

PNP Silicon

LBCW69LT1G

LBCW70LT1G

2

EMITTER

3

COLLECTOR

1

BASE

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

Featrues

compliance with RoHS requirements.

We declare that the material of product

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