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Dated : 01/09/2006
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
RB500V-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Features
• Small surface mounting type
• Low IR
• High reliability
Applications
• Low current rectification
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
45
V
Power Dissipation
Ptot
200
mW
Reverse Voltage
VR
40
V
Mean Rectifying Current
IO
0.1
A
Peak Forward Surge Current (60 Hz for 1 Cyc.)
IFSM
1
A
Junction Temperature
Tj
125
O
C
Storage Temperature Range
Ts
- 40 to + 125
O
C
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
at IR = 100 µA
V(BR)R
45
-
-
V
Forward Voltage
at IF = 10 mA
VF
-
-
0.45
V
Reverse Current
at VR = 10 V
IR
-
-
1
µA
Capacitance Between Terminals
at VR = 10 V, f = 1 MHz
CT
-
6
-
pF
Note: ESD sensitive product handling required.
Anode
2
Top View
Marking Code: "S9"
Simplified outline SOD-323 and symbol
1
S9
2
PINNING
1
PIN
Cathode
DESCRIPTION
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